Abstract
Gas sensors based on semiconductor-metal-oxide nanomaterial have recently emerged due to their advantages of offering large surface to volume ratio. Unfortunately, these sensors are vulnerable to environmental humidity and lack of selectivity when exposed to common gases in air. In this letter, a novel morphology of ZnO nanomaterial is proposed for fabricating NO2 gas sensor through our customized vapor trapping chemical vapor deposition process. By operating the fabricated gas sensors at the room temperature, high sensing performance, including a large output response of 11.06 and a short response/recovery time of 107/124 s, is achieved for 20-ppm NO2. Moreover, the sensor response remains stable under humid environment up to 76%RH. In addition, the extensive experimental results indicate that our fabricated NO2 gas sensors exhibit high selectivities of 61.7, 42.8, and 54.4 dB for different target gases of H2, CH2O, and C6H6, respectively. These features will enable the mass fabrication of miniaturized, cost-effective, and highly robust gas sensor suitable for real-life application.
| Original language | English |
|---|---|
| Article number | 7339464 |
| Pages (from-to) | 92-95 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 37 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2016 |
Keywords
- NO2 gas sensor
- Semiconductor metal oxide nanomaterial
- high selectivity
- humidity-insensitive
- room temperature