A 405-nW CMOS temperature sensor based on linear MOS operation

Man Kay Law; A. Bermak

doi:10.1109/TCSII.2009.2034201

A 405-nW CMOS temperature sensor based on linear MOS operation

Man Kay Law, A. Bermak

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

This brief presents a CMOS temperature sensor suitable for ultralow-power applications.With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm², is fabricated using the TSMC 0.18-μm one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of-0.8 °C to +1 °C from 0 °C to 100 °C after calibration is achieved.

Original language	English
Pages (from-to)	891-895
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	56
Issue number	12
DOIs	https://doi.org/10.1109/TCSII.2009.2034201
Publication status	Published - Dec 2009
Externally published	Yes

Keywords

CMOS temperature sensor
Ultralow-power applications

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10.1109/TCSII.2009.2034201

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abstract = "This brief presents a CMOS temperature sensor suitable for ultralow-power applications.With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm2, is fabricated using the TSMC 0.18-μm one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of-0.8 °C to +1 °C from 0 °C to 100 °C after calibration is achieved.",

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T1 - A 405-nW CMOS temperature sensor based on linear MOS operation

AU - Law, Man Kay

AU - Bermak, A.

PY - 2009/12

Y1 - 2009/12

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AB - This brief presents a CMOS temperature sensor suitable for ultralow-power applications.With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm2, is fabricated using the TSMC 0.18-μm one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of-0.8 °C to +1 °C from 0 °C to 100 °C after calibration is achieved.

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KW - Ultralow-power applications

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M3 - Article

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SN - 1549-7747

VL - 56

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JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

IS - 12

ER -

A 405-nW CMOS temperature sensor based on linear MOS operation

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Keywords

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