2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

A. Salhi; Y. Rouillard; J. Angellier; P. Grech; A. Vicet

doi:10.1049/el:20040281

2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

A. Salhi^*
, Y. Rouillard
, J. Angellier
, P. Grech
, A. Vicet

^*Corresponding author for this work

CEM2

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm² per quantum well was obtained.

Original language	English
Pages (from-to)	424-425
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1049/el:20040281
Publication status	Published - 1 Apr 2004
Externally published	Yes

Access to Document

10.1049/el:20040281

Cite this

@article{f6386299792744649e85eec5b0e68682,

title = "2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold",

abstract = "Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.",

author = "A. Salhi and Y. Rouillard and J. Angellier and P. Grech and A. Vicet",

year = "2004",

month = apr,

day = "1",

doi = "10.1049/el:20040281",

language = "English",

volume = "40",

pages = "424--425",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "7",

}

TY - JOUR

T1 - 2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

AU - Salhi, A.

AU - Rouillard, Y.

AU - Angellier, J.

AU - Grech, P.

AU - Vicet, A.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.

AB - Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.

UR - https://www.scopus.com/pages/publications/2142841008

U2 - 10.1049/el:20040281

DO - 10.1049/el:20040281

M3 - Article

AN - SCOPUS:2142841008

SN - 0013-5194

VL - 40

SP - 424

EP - 425

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

Abstract

Access to Document

Other files and links

Fingerprint

Cite this